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Nanoindentation study of thin plasma enhanced chemical vapor deposition SiCOH low-k films modified in He/H2 downstream plasma
Ist Teil von
Journal of vacuum science and technology. B, Nanotechnology & microelectronics, 2010-01, Vol.28 (1), p.173-179
Erscheinungsjahr
2010
Quelle
AIP Journals Complete
Beschreibungen/Notizen
The effect of He/H2 downstream plasma (DSP) on the mechanical properties of plasma enhanced chemical vapor deposition SiCOH low-k films was studied using nanoindentation (NI) with the continuous-stiffness measurement technique. Furthermore, the main requirements for reliable NI measurements on plasma-modified low-k films are discussed. The results show that the mechanical properties of these films are intimately linked with their porosity and that exposure to He/H2 DSP causes a change in both the porosity and the mechanical properties of the films. This change is related to the removal of porogen residue formed during the ultraviolet curing of the low-k film.
Sprache
Englisch
Identifikatoren
ISSN: 2166-2746
eISSN: 2166-2754
DOI: 10.1116/1.3293200
Titel-ID: cdi_crossref_primary_10_1116_1_3293200
Format
–
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