Details

Autor(en) / Beteiligte

• Vanstreels, Kris
• Urbanowicz, Adam M.

Titel

Nanoindentation study of thin plasma enhanced chemical vapor deposition SiCOH low-k films modified in He/H2 downstream plasma

Ist Teil von

• Journal of vacuum science and technology. B, Nanotechnology & microelectronics, 2010-01, Vol.28 (1), p.173-179

Erscheinungsjahr

2010

Quelle

AIP Journals Complete

Beschreibungen/Notizen

• The effect of He/H2 downstream plasma (DSP) on the mechanical properties of plasma enhanced chemical vapor deposition SiCOH low-k films was studied using nanoindentation (NI) with the continuous-stiffness measurement technique. Furthermore, the main requirements for reliable NI measurements on plasma-modified low-k films are discussed. The results show that the mechanical properties of these films are intimately linked with their porosity and that exposure to He/H2 DSP causes a change in both the porosity and the mechanical properties of the films. This change is related to the removal of porogen residue formed during the ultraviolet curing of the low-k film.