Details

Autor(en) / Beteiligte

• Bank, Seth R.
• Wistey, Mark A.
• Yuen, Homan B.
• Goddard, Lynford L.
• Bae, Hopil
• Harris, James S.

Titel

Molecular-beam epitaxy growth of low-threshold cw GaInNAsSb lasers at 1.5 μ m

Ist Teil von

• Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 2005-05, Vol.23 (3), p.1337-1340

Erscheinungsjahr

2005

Link zum Volltext

Quelle

AIP Journals Complete

Beschreibungen/Notizen

• The solid-source molecular-beam epitaxial growth of low-threshold GaAs-based GaInNAsSb lasers is discussed. A general narrowing of the growth window was observed with increasing wavelength, due to the increased nitrogen required ( ⩾ 1 % ) , and has historically made high-performance devices more difficult to achieve beyond ∼ 1.35 μ m . The introduction of antimony and reduction in plasma-related damage from the rf nitrogen source dramatically improved material quality and widened the growth window. We validate these observations with 1.5 μ m edge-emitting ridge-waveguide lasers with cw threshold current densities as low as 440 A ∕ cm 2 , peak CW output powers of 431 mW , peak cw wallplug efficiencies > 16 % , and pulsed output powers > 1 W .