Details

Autor(en) / Beteiligte

• Tian, Zhaobo
• Du, Songmo
• Cui, Wei
• Zhang, Jie
• Li, Fei
• Chen, Zhanglin
• Chen, Kexin
• Liu, Guanghua

Titel

Formation of Si 3 N 4 coating on SiC substrate by gas transporting self‐propagating high‐temperature synthesis with the addition of NH 4 Cl

Ist Teil von

• Journal of the American Ceramic Society, 2022-01, Vol.105 (1), p.50-54

Erscheinungsjahr

2022

Quelle

Wiley Online Library Journals Frontfile Complete

Beschreibungen/Notizen

• Abstract Under the urgent demand of high‐performance silicon nitride substrate (Si 3 N 4 ), this paper reports a new gas transporting self‐propagating high‐temperature synthesis technology (GTST) to form Si 3 N 4 coating on silicon carbide (SiC) substrate with the addition of NH 4 Cl, which may partly be a candidate of high‐performance Si 3 N 4 substrate. The effect of NH 4 Cl on the formation of the Si 3 N 4 coating is investigated, and the reaction mechanism with the participation of NH 4 Cl is discussed. The addition of the NH 4 Cl promotes the formation of the compact Si 3 N 4 coating with a thickness of 20–80 μm on both sides of SiC substrate. During the reaction, NH 4 Cl acts as a carrier to convert solid and liquid Si particles into gas phase SiCl 4 , and transport it to SiC substrate. Finally, SiCl 4 is nitride into Si 3 N 4 coating under the higher temperature generated by the combustion wave. Moreover, the research mechanism can provide a guide for other complex ceramic coatings by GTST.