Sie befinden Sich nicht im Netzwerk der Universität Paderborn. Der Zugriff auf elektronische Ressourcen ist gegebenenfalls nur via VPN oder Shibboleth (DFN-AAI) möglich. mehr Informationen...
Single-wafer process technology: enabling rapid SiGe BiCMOS development
Ist Teil von
IEEE transactions on semiconductor manufacturing, 2003-05, Vol.16 (2), p.121-127
Ort / Verlag
New York: IEEE
Erscheinungsjahr
2003
Quelle
IEEE Xplore
Beschreibungen/Notizen
This paper explores the application of single-wafer processing (SWP) tools to rapidly create high-value added, innovative processes technologies, using the example of SiGe BiCMOS process technology development to highlight the unique advantages that SWP provides to rapidly develop a cost-effective and innovative platform. This paper also reviews the unique requirements necessary for SiGe BiCMOS technology development. SWP equipment is shown to be ideally suited to meeting both the technical and schedule requirements for rapidly and efficiently executing a technology development plan. In addition, the flexibility of single-wafer tooling is well suited to a lower volume technology without compromising the ability to modularly scale the SiGe unit process to meet higher volume production requirements.