Details

Autor(en) / Beteiligte

• Lyu, Xintong
• Li, He
• Abdullah, Yousef
• Wang, Ke
• Hu, Boxue
• Yang, Zhi
• Liu, Jiawei
• Wang, Jin
• Liu, Liming
• Bala, Sandeep

Titel

A Reliable Ultrafast Short-Circuit Protection Method for E-Mode GaN HEMT

Ist Teil von

• IEEE transactions on power electronics, 2020-09, Vol.35 (9), p.8926-8933

Ort / Verlag

New York: IEEE

Erscheinungsjahr

2020

Quelle

IEEE

Beschreibungen/Notizen

• A unique three-step short-circuit protection method is proposed for the 650-V enhancement mode (E-mode) gallium nitride high-electron mobility transistor (GaN HEMT). This method can quickly detect the short-circuit event, reduce gate voltage to enhance the device short-circuit capability, and turn off the device under fault after confirmation. Experimental results prove that with this method, the short-circuit fault detection time for E-mode GaN HEMT is shortened from 2  μ s to several tens of nanoseconds, and the device can be successfully protected from fatal failure under high dc bus voltage without mistriggering.