IEEE transactions on nuclear science, 2008-06, Vol.55 (3), p.1201-1205
2008
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Details
- Autor(en) / Beteiligte
- Titel
- Ce-doped YAG and LuAG Epitaxial Films for Scintillation Detectors
- Ist Teil von
- IEEE transactions on nuclear science, 2008-06, Vol.55 (3), p.1201-1205
- Ort / Verlag
- New York: IEEE
- Erscheinungsjahr
- 2008
- Quelle
- IEEE Xplore
- Beschreibungen/Notizen
- Epitaxial garnet films of undoped and Ce 3+ -doped yttrium aluminum garnet (YAG) and lutetium aluminum garnet (LuAG) were grown by the isothermal liquid phase epitaxy from two different fluxes: we used a standard PbO-B 2 O 3 flux and, as a novelty, BaO-B 2 O 3 -BaF 2 flux. It is shown that the films obtained from the lead-free BaO flux exhibited superior luminescent properties comparable with those of Czochralski grown single crystals. A detailed comparison of optical, luminescent, and kinetic properties of films grown from these two types of fluxes is made.
- Sprache
- Englisch
- Identifikatoren
- ISSN: 0018-9499eISSN: 1558-1578DOI: 10.1109/TNS.2007.913490Titel-ID: cdi_crossref_primary_10_1109_TNS_2007_913490
- Format
- –
- Schlagworte
- Aluminum, Ce:LuAG, Ce:YAG, Crystals, Environmentally friendly manufacturing techniques, Epitaxial growth, Fluxes, garnet, Garnet films, Garnets, Isothermal processes, Kinetic theory, Liquid phase epitaxy, luminescence, Optical films, Optical properties, Scintillation counters, scintillator, YAG, Yttrium