Details

Autor(en) / Beteiligte

• Metcalfe, J.
• Dorfan, D.E.
• Grillo, A.A.
• Jones, A.
• Lucia, D.
• Martinez-McKinney, F.
• Mendoza, M.
• Rogers, M.
• Sadrozinski, H.F.-W.
• Seiden, A.
• Spencer, E.
• Wilder, M.
• Cressler, J.D.
• Prakash, G.
• Sutton, A.

Titel

Evaluation of the Radiation Tolerance of SiGe Heterojunction Bipolar Transistors Under 24-GeV Proton Exposure

Ist Teil von

• IEEE transactions on nuclear science, 2006-12, Vol.53 (6), p.3889-3893

Ort / Verlag

New York: IEEE

Erscheinungsjahr

2006

Quelle

IEEE Electronic Library Online

Beschreibungen/Notizen

• For the potential use in future high luminosity applications in high energy physics (HEP) [e.g., the Large Hadron Collider (LHC) upgrade], we evaluated the radiation tolerance of a candidate technology for the front-end of the readout application-specific integrated circuit (ASIC) for silicon strip detectors. The devices investigated were first-generation silicon-germanium (SiGe) heterojunction bipolar transistors (HBTs). The current gain as a function of collector current has been measured at several stages: before and after irradiation with 24-GeV protons up to fluences of 10 16 p/cm 2 , and after annealing at elevated temperature. The analog section of an amplifier for silicon strip detectors typically has a special front transistor, chosen carefully to minimize noise and usually requiring a larger current than the other transistors, and a large number of additional transistors used in shaping sections and for signal-level discrimination. We discuss the behavior of both kinds of transistors, with a particular focus on issues of noise, power, and radiation limitations