Details

Autor(en) / Beteiligte

• Vijayvargiya, Vikas
• Vishvakarma, Santosh Kumar

Titel

Effect of Drain Doping Profile on Double-Gate Tunnel Field-Effect Transistor and its Influence on Device RF Performance

Ist Teil von

• IEEE transactions on nanotechnology, 2014-09, Vol.13 (5), p.974-981

Ort / Verlag

New York: IEEE

Erscheinungsjahr

2014

Quelle

IEEE Electronic Library (IEL)

Beschreibungen/Notizen

• In this paper, we have investigated the effect of drain doping profile on a double-gate tunnel field-effect transistor (DG-TFET) and its radio-frequency (RF) performances. Lateral asymmetric drain doping profile suppresses the ambipolar behavior, improves OFF-state current, reduces the gate-drain capacitance, and improves the RF performance. Further, placing the high-density layer in the channel near the source-channel junction, a reduction in the width of depletion region, improvement in ON-state current (I ON ), and subthreshold slope are analyzed for this asymmetric drain doping. However, it also improves many RF figures of merit for the DG-TFET. Furthermore, lateral asymmetric doping effects on RF performances are also checked for the various channel length. Therefore, this paper would be beneficial for a new generation of RF circuits and systems in a broad range of applications and operating frequencies covering RF spectrum. So, the RF figures of merit for the DG-TFET are analyzed in terms of transconductance (g m ), unit-gain cutoff frequency (f T ), maximum frequency of oscillation (f max ), and gain bandwidth product. For this, the RF figures of merit have been extracted from the V-parameter matrix generated by performing the small-signal ac analysis. Technology computer-aided design simulations have been performed by 2-D ATLAS, Silvaco International, Santa Clara, CA, USA.