IEEE transactions on nanotechnology, 2006-09, Vol.5 (5), p.430-435
2006
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Details
- Autor(en) / Beteiligte
- Titel
- Intersubband Scattering in Double-Gate MOSFETs
- Ist Teil von
- IEEE transactions on nanotechnology, 2006-09, Vol.5 (5), p.430-435
- Ort / Verlag
- New York, NY: IEEE
- Erscheinungsjahr
- 2006
- Quelle
- IEEE/IET Electronic Library (IEL)
- Beschreibungen/Notizen
- Quantum mechanical features of even the most basic of semiconductor components can be expected to become of paramount importance for future nanoelectronics and quantum information technology. Here, we show that the conductivity of even a two-dimensionally extended double-gate silicon-on-insulator metal-oxide-silicon field-effect transistor can develop a distinct peak structure in its top-gate voltage dependence at low temperatures, due to the discreteness of subband edges resulting from quantum mechanical confinement in the vertical gating direction. Our findings are confirmed using low-temperature magnetic field measurements
- Sprache
- Englisch
- Identifikatoren
- ISSN: 1536-125XeISSN: 1941-0085DOI: 10.1109/TNANO.2006.880425Titel-ID: cdi_crossref_primary_10_1109_TNANO_2006_880425
- Format
- –
- Schlagworte
- Applied sciences, Classical and quantum physics: mechanics and fields, Compound structure devices, Conductivity, Double-gate FETs, Electric potential, Electronics, Exact sciences and technology, Gating and risering, Information systems, Information technology, Low voltage, Molecular electronics, nanoelectronics, MOSFETs, Nanoelectronics, Particle scattering, Physics, quantization, Quantum information, Quantum mechanics, quantum wells, Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices, Semiconductors, Silicon on insulator technology, silicon-on-insulator (SOI) technology, Temperature dependence, Transistors, Voltage