Details

Autor(en) / Beteiligte

• Lu, Li
• Bian, Jiaojing
• Ma, Shulang
• Liu, Yongsheng
• Dai, Yixin
• Zhu, Zhihan
• Liu, Siyang
• Sun, Weifeng
• Lin, Feng
• Xu, Chaoqi
• Xu, Penglong

Titel

Improved Hot-Carrier Reliability of an Ultralow R ON,sp SOI-LDMOS by Linearly Doped Technology for Automotive Application

Ist Teil von

• IEEE transactions on electron devices, 2024-01, Vol.71 (1), p.935-939

Ort / Verlag

New York: The Institute of Electrical and Electronics Engineers, Inc. (IEEE)

Erscheinungsjahr

2024

Quelle

IEEE Electronic Library Online

Beschreibungen/Notizen

• In this work, an ultralow specific ON-resistance ([Formula Omitted]) silicon-on-insulator lateral double diffusion metal-oxide-semiconductor (SOI-LDMOS) applied in automotive circuits has been fabricated based on the [Formula Omitted] process technology with 16.5 [Formula Omitted]mm2 which leads about 30% than that of reported studies. However, the poor hot carrier reliability of the SOI-LDMOS cannot fulfill the automotive circuits. To solve it, a new device has been proposed with linearly doped technology based on the discussions on the inner mechanisms of the [Formula Omitted] degradation. Thanks to the linear doping concentration in lateral and vertical directions near the damage points (poly-gate edge and bird’s beak), the impact ionization and vertical electric field have been weakened evidently. As a result, the [Formula Omitted] degradation of the proposed device (Device A) has been improved effectively and decreased from 11% to lower 1% when stressing 10000 s under the hot carrier stress. Meanwhile, the static electrical parameters of the Device A are still in an acceptable changes with OFF-state breakdown voltage (BVOFF) about 55 V and [Formula Omitted] about 17.5 [Formula Omitted]mm2.