Details

Autor(en) / Beteiligte

• Lu, Li
• Zhu, Zhihan
• Dai, Yixin
• Liu, Siyang
• Sun, Weifeng
• Zhang, Long
• Lin, Feng
• Xiao, Jinyu
• Sun, Jun

Titel

Repetitive ESD-Induced Electrical Degradation and Optimization for High-Voltage SOI-LIGBT as Output Device

Ist Teil von

• IEEE transactions on electron devices, 2023-09, Vol.70 (9), p.4547-4553

Ort / Verlag

New York: IEEE

Erscheinungsjahr

2023

Quelle

IEEE/IET Electronic Library (IEL)

Beschreibungen/Notizen

• In our work, the reliabilities and inner mechanisms of the high-voltage silicon-on-insulator lateral insulated gate bipolar transistors (SOI-LIGBTs) have been investigated comprehensively under the repetitive electrostatic discharge (ESD) stresses for better application on the high-voltage circuits. The worst repetitive ESD stress occurs when the SOI-LIGBT is getting snapback with the turn- ON of the parasitic transistor. In the worst transmission line pulse (TLP) stress I, the ON-state voltage (<inline-formula> <tex-math notation="LaTeX">{V} _{\text {on}} </tex-math></inline-formula>) and collector-to-emitter current density (<inline-formula> <tex-math notation="LaTeX">{J} _{\text {ce}} </tex-math></inline-formula>) are decreased as the stressing times. The decreased <inline-formula> <tex-math notation="LaTeX">{V} _{\text {on}} </tex-math></inline-formula> is attributed to the hot-hole injection at the gate plate edge, while the decreased <inline-formula> <tex-math notation="LaTeX">{J} _{\text {ce}} </tex-math></inline-formula> is attributed to the interface states generation at the gate plate edge and collector plate edge. The <inline-formula> <tex-math notation="LaTeX">{V} _{\text {on}} </tex-math></inline-formula> decrease is better for SOI-LIGBT, but the decreased <inline-formula> <tex-math notation="LaTeX">{J} _{\text {ce}} </tex-math></inline-formula> is the opposite. To restrain the <inline-formula> <tex-math notation="LaTeX">{J} _{\text {ce}} </tex-math></inline-formula> degradation, the P-top layer structure has been proposed and fabricated with the same mask of the P-body. Then, the measured <inline-formula> <tex-math notation="LaTeX">{J} _{\text {ce}} </tex-math></inline-formula> degradation shows effective improvement of the proposed device due to its remarkable weakness for the hot-carrier effects.