IEEE transactions on electron devices, 2010-05, Vol.57 (5), p.1183-1187
2010
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Details
- Autor(en) / Beteiligte
- Titel
- SiGe HBT CML Ring Oscillator With 2.3-ps Gate Delay at Cryogenic Temperatures
- Ist Teil von
- IEEE transactions on electron devices, 2010-05, Vol.57 (5), p.1183-1187
- Ort / Verlag
- New York, NY: IEEE
- Erscheinungsjahr
- 2010
- Quelle
- IEEE/IET Electronic Library (IEL)
- Beschreibungen/Notizen
- We present a measured current-mode logic ring oscillator gate delay of 2.3 ps, a record for digital circuits in silicon-based technologies. This result was achieved in a silicon-germanium (SiGe) heterojunction bipolar transistor (HBT) technology operating at 25 K. In addition to higher cutoff frequency and lower collector-base capacitance, lower base resistance is also responsible for the improved switching speed at cryogenic temperatures. The self-heating characteristics of these SiGe HBT circuits are also investigated across temperatures.
- Sprache
- Englisch
- Identifikatoren
- ISSN: 0018-9383eISSN: 1557-9646DOI: 10.1109/TED.2010.2042769Titel-ID: cdi_crossref_primary_10_1109_TED_2010_2042769
- Format
- –
- Schlagworte
- Applied sciences, Circuit properties, Circuits, Cryogenic temperature, Cryogenic temperatures, Cryogenics, Delay, Digital circuits, Electric, optical and optoelectronic circuits, Electronic circuits, Electronics, Exact sciences and technology, Gates, heterojunction bipolar transistor (HBT), Heterojunction bipolar transistors, Logic gates, Oscillators, Oscillators, resonators, synthetizers, ring oscillator, Ring oscillators, Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices, SiGe HBTs, Silicon, Silicon germanides, Silicon germanium, silicon-germanium (SiGe), Switching, Transistors