Details

Autor(en) / Beteiligte

• Duan, Jianan
• Huang, Heming
• Dong, Bozhang
• Jung, Daehwan
• Norman, Justin C.
• Bowers, John E.
• Grillot, Frederic

Titel

1.3- \mu m Reflection Insensitive InAs/GaAs Quantum Dot Lasers Directly Grown on Silicon

Ist Teil von

• IEEE photonics technology letters, 2019-03, Vol.31 (5), p.345-348

Ort / Verlag

IEEE

Erscheinungsjahr

2019

Link zum Volltext

• IEEE_Xplore

Quelle

IEEE/IET Electronic Library

Beschreibungen/Notizen

• This letter reports on a 1.3-μm reflection insensitive transmission with a quantum dot laser directly grown on silicon in the presence of strong optical feedback. These results show a penalty-free transmission at 10 GHz under external modulation with -7.4-dB optical feedback. The feedback insensitivity results from the low linewidth enhancement factor, the high damping, the absence of off-resonance emission states, and the shorter carrier lifetime. This letter paves the way for future on chip high-speed integrated circuits operating without optical isolators.