IEEE photonics technology letters, 2002-08, Vol.14 (8), p.1031-1033
2002
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Details
- Autor(en) / Beteiligte
- Titel
- CW operation and threshold characteristics of all-monolithic InAlGaAs 1.55-μm VCSELs grown by MOCVD
- Ist Teil von
- IEEE photonics technology letters, 2002-08, Vol.14 (8), p.1031-1033
- Ort / Verlag
- IEEE
- Erscheinungsjahr
- 2002
- Quelle
- IEEE Xplore
- Beschreibungen/Notizen
- We demonstrate an all-monolithic metal-organic chemical vapor epitaxy (MOCVD)-grown 1.55-μm vertical-cavity surface-emitting laser operating continuous wave up to 35/spl deg/C. The structure is based on the InAlGaAs-InP material system grown by a single step of MOCVD. Wet oxidation of a strained In/sub 0.4/Al/sub 0.6/As layer is used for the current confinement. The threshold current, threshold voltage and the external quantum efficiency at room temperature are about 1.6 mA, 2.3 V, and 5.4%, respectively.
- Sprache
- Englisch
- Identifikatoren
- ISSN: 1041-1135eISSN: 1941-0174DOI: 10.1109/LPT.2002.1021959Titel-ID: cdi_crossref_primary_10_1109_LPT_2002_1021959
- Format
- –
- Schlagworte
- Chemical lasers, Confinement, Continuous wave, Epitaxial growth, Epitaxy, MOCVD, Optical materials, Oxidation, Photonics, Quantum efficiency, Surface emitting lasers, Surface waves, Threshold current, Threshold currents, Threshold voltage, Thresholds, Vertical cavity surface emitting lasers, Wet oxidation