Details

Autor(en) / Beteiligte

• Tong, Xiaodong
• Zhang, Liang
• Zheng, Penghui
• Zhang, Shiyong
• Xu, Jianxing
• Wang, Rong

Titel

An 18-56-GHz Wideband GaN Low-Noise Amplifier With 2.2-4.4-dB Noise Figure

Ist Teil von

• IEEE microwave and wireless components letters, 2020-12, Vol.30 (12), p.1153-1156

Ort / Verlag

New York: IEEE

Erscheinungsjahr

2020

Link zum Volltext

• IEEE_Xplore

Quelle

IEEE Xplore Digital Library

Beschreibungen/Notizen

• An 18-56-GHz gallium nitride (GaN) low-noise amplifier (LNA) monolithic microwave integrated circuit (MMIC) is presented in this letter. This LNA is fabricated with commercial 0.1-<inline-formula> <tex-math notation="LaTeX">\mu \text{m} </tex-math></inline-formula> gate-length GaN-on-silicon (GaN/Si) process. The gain is 16-21.5 dB and the <inline-formula> <tex-math notation="LaTeX">\vert {S} 11\vert </tex-math></inline-formula> and <inline-formula> <tex-math notation="LaTeX">\vert {S} 22\vert </tex-math></inline-formula> are below −5 dB across the band. The noise figure (NF) is 2.2-4.4 dB and the output power at 1-dB compression point (<inline-formula> <tex-math notation="LaTeX">{P} _{\text {1 dB}} </tex-math></inline-formula>) is 10-20 dBm. This LNA has four-stage-cascade and common-source structure with <inline-formula> <tex-math notation="LaTeX">4.8\times 1 </tex-math></inline-formula> mm 2 chip area. The dc power dissipation is 1.4 W. To the best of the author's knowledge, there has been no GaN LNA covering such a wide bandwidth at this frequency range. This LNA shows ultrawide bandwidth, low NF, high linearity, and high robustness. Moreover, it can be directly integrated with GaN power amplifiers (PAs) and switches to realize the monolithic RF front-ends, which can largely reduce the packaging loss and the module volume. This LNA has a great potential in wideband, high-speed, high-reliability, and high-integration applications.