IEEE electron device letters, 2022-03, Vol.43 (3), p.370-373
2022
Volltextzugriff (PDF)
Details
- Autor(en) / Beteiligte
- Titel
- Curing of 1-Transistor-DRAM by Joule Heat From Punch-Through Current
- Ist Teil von
- IEEE electron device letters, 2022-03, Vol.43 (3), p.370-373
- Ort / Verlag
- New York: IEEE
- Erscheinungsjahr
- 2022
- Quelle
- IEEE Electronic Library (IEL)
- Beschreibungen/Notizen
- The 1-transistor-DRAM (1T-DRAM) with a floating body is iteratively operated and deteriorated as the number of programming cycles is increased. This aging results an increase in the interface trap density (<inline-formula> <tex-math notation="LaTeX">{N}_{\text {it}}{)} </tex-math></inline-formula>. Internal electro-thermal annealing (ETA) using Joule heat generated by punch-through current flowing from the source via the channel to the drain, reduces the <inline-formula> <tex-math notation="LaTeX">{N}_{\text {it}} </tex-math></inline-formula> and eventually cures the operating damage of the 1T-DRAM. To quantitatively analyze the <inline-formula> <tex-math notation="LaTeX">{N}_{\text {it}} </tex-math></inline-formula> before and after curing, a synchronized optical charge pumping (SOCP) method that is applicable even to a floating body (FB) device, was used. By adopting self-curing during 1T-DRAM operations, endurance was notably increased by reducing <inline-formula> <tex-math notation="LaTeX">{N}_{\text {it}} </tex-math></inline-formula>. It is expected that aged 1T-DRAMs can be recovered when such ETA is enabled at the moment of system rebooting.
- Sprache
- Englisch
- Identifikatoren
- ISSN: 0741-3106eISSN: 1558-0563DOI: 10.1109/LED.2022.3147259Titel-ID: cdi_crossref_primary_10_1109_LED_2022_3147259
- Format
- –
- Schlagworte
- 1-transistor-DRAM (1T-DRAM), Curing, electro-thermal annealing (ETA), Field effect transistors, Floating bodies, floating body (FB), Gallium arsenide, gate-all-around (GAA), Heating systems, hot-carrier injection (HCI), interface trap density, Joule heat, Logic gates, Optical pumping, punch-through, Semiconductor devices, single transistor latch (STL), Stress, synchronized optical charge pumping (SOCP), Temperature measurement, Transistors