Details

Autor(en) / Beteiligte

• Lee, M. H.
• Wei, Y.-T
• Chu, K.-Y
• Huang, J.-J
• Chen, C.-W
• Cheng, C.-C
• Chen, M.-J
• Lee, H.-Y
• Chen, Y.-S
• Lee, L.-H
• Tsai, M.-J

Titel

Steep Slope and Near Non-Hysteresis of FETs With Antiferroelectric-Like HfZrO for Low-Power Electronics

Ist Teil von

• IEEE electron device letters, 2015-04, Vol.36 (4), p.294-296

Ort / Verlag

IEEE

Erscheinungsjahr

2015

Quelle

IEEE Xplore

Beschreibungen/Notizen

• The antiferroelectricity in HfZrO 2 (HZO) annealed at 600 °C with an abrupt turn ON of FET characteristics with SSmin = 23 mV/dec and SSavg = 50 mV/dec over 4 decades of IDS is demonstrated. The near non-hysteresis is achieved with an antiferroelectric-like HZO due to a small remanent polarization and a coercive field. A feasible concept of coupling the antiferroelectric and ferroelectric type HZO are used for low-power electronics and the memory applications, respectively.