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A dynamic RAM cell based on the field-effect diode (FED) is presented, and its operation is described and explained with the help of numerical device simulations. This new cell resembles the thin capacitively coupled thyristor (TCCT) cell in concept and operation, however it has important advantages. These advantages derive from the fact that the thyristor-like mode of operation of the FED is gate induced, whereas the TCCT is an actual, built-in thyristor. High read 0/1 current margin, fast write/read time, good retention, and densely packed cells are obtained.