IEEE electron device letters, 2009-05, Vol.30 (5), p.496-498
2009
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Details
- Autor(en) / Beteiligte
- Titel
- Extraction Efficiency Enhancement of GaN-Based Light-Emitting Diodes by Microhole Array and Roughened Surface Oxide
- Ist Teil von
- IEEE electron device letters, 2009-05, Vol.30 (5), p.496-498
- Ort / Verlag
- New York, NY: IEEE
- Erscheinungsjahr
- 2009
- Quelle
- IEEE Xplore
- Beschreibungen/Notizen
- The light-output power of GaN-based light-emitting diodes (LEDs) was enhanced by microhole array pattern and roughened GaO x film grown on the exposed surface. The GaO x film was grown by photoelectrochemical (PEC) oxidation via H 2 O and formed a naturally rough oxide surface and GaO x /GaN interface. Compared with that of conventional broad-area LEDs, the output power of the microhole array LED and the surface-oxidized microhole array LED increased by 1.38 and 1.82 times at 20-mA forward current, respectively. The results show that the microhole array pattern with the roughened surface oxide method could significantly enhance light extraction efficiency and be a candidate for manufacturing high-efficient low-cost GaN-based LEDs.
- Sprache
- Englisch
- Identifikatoren
- ISSN: 0741-3106eISSN: 1558-0563DOI: 10.1109/LED.2009.2016766Titel-ID: cdi_crossref_primary_10_1109_LED_2009_2016766
- Format
- –
- Schlagworte
- Applied sciences, Arrays, Devices, Electronics, Etching, Exact sciences and technology, Exposure, Extraction, Extraction efficiency, Gallium nitride, Gallium nitrides, GaN, General (including economical and industrial fields), Light emitting diodes, light-emitting diode (LED), Microholes, Optical arrays, Optical films, Optical reflection, Optical surface waves, Optoelectronic devices, Oxidation, Oxides, photoelectrochemical (PEC), Rough surfaces, Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices, Surface roughness