Details

Autor(en) / Beteiligte

• Chen, J.-Y.
• Guo, D.-F.
• Cheng, S.-Y.
• Lee, K.-M.
• Chen, C.-Y.
• Chuang, H.-M.
• Fu, S.-Y.
• Liu, W.-C.

Titel

A new InP-InGaAs HBT with a superlattice-collector structure

Ist Teil von

• IEEE electron device letters, 2004-05, Vol.25 (5), p.244-246

Ort / Verlag

New York: IEEE

Erscheinungsjahr

2004

Link zum Volltext

• IEEE_Xplore

Quelle

IEEE Xplore

Beschreibungen/Notizen

• The dc characteristics of an interesting InP-InGaAs heterojunction bipolar transistor (HBT) with a superlattice (SL) structure incorporated in the base-collector (B-C) junction are demonstrated. In the SL structure, holes injected from the collector collide with holes confined in the SL and impact them out of the SL across the valence-band discontinuities. With a collector-emitter (C-E) voltage V/sub CE/ less than the C-E breakdown voltage BV/sub CE0/, the current gain can be increased at base-current inputs because the released holes from the SL inject into the base to cause the emitter-base junction operating under more forward-biased condition. An ac current gain up to 204 is obtained. At base-emitter voltage V/sub BE/ inputs, the released holes travel to the base terminal to decrease the base current. The studied HBT exhibits common-emitter current gains exceeding 47 at low current levels and useful gains spreading over seven orders of magnitude of collector current.