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IEEE journal of solid-state circuits, 2016-12, Vol.51 (12), p.2928-2940
2016
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Autor(en) / Beteiligte
Titel
An Oversampling SAR ADC With DAC Mismatch Error Shaping Achieving 105 dB SFDR and 101 dB SNDR Over 1 kHz BW in 55 nm CMOS
Ist Teil von
  • IEEE journal of solid-state circuits, 2016-12, Vol.51 (12), p.2928-2940
Ort / Verlag
IEEE
Erscheinungsjahr
2016
Quelle
IEEE Xplore
Beschreibungen/Notizen
  • The successive-approximation-register (SAR) architecture is well known for its high power efficiency in medium-resolution analog-to-digital converters (ADCs). However, when considered for high-precision applications, SAR ADCs suffer from non-linearity resulting from capacitor mismatch and limited dynamic range due to comparator noise. This work presents a mismatch error shaping (MES) technique for oversampling SAR ADCs to achieve 105 dB in-band SFDR without calibration. The capacitor mismatch error is first-order high-pass filtered by simply delaying the reset of LSB capacitor array after sampling. The comparator thermal and flicker noise are also first-order shaped to high frequencies by noise shaping. The prototype in 55 nm CMOS occupies 0.072 mm 2 and achieves a peak SNDR of 101 dB over 1 kHz bandwidth. It consumes 15.7 μW from a 1.2 V supply at 1 MS/s and can be configured to Nyquist mode up to 5 MS/s. These features enable the application of SAR ADCs in high-precision, multi-purpose sensor readout interfaces.
Sprache
Englisch
Identifikatoren
ISSN: 0018-9200
eISSN: 1558-173X
DOI: 10.1109/JSSC.2016.2592623
Titel-ID: cdi_crossref_primary_10_1109_JSSC_2016_2592623

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