Details

Autor(en) / Beteiligte

• Zhao, Jijie
• Liu, Huan
• Deng, Lier
• Du, Yuxuan
• Yin, Xingtian
• Wang, Jiuhong
• Xie, Fei
• Wen, Shuai
• Wang, Shengyong
• Liu, Weiguo

Titel

High-Sensitivity Photodetectors Based On Silver Nanowires/Silicon Nanopillar Arrays

Ist Teil von

• IEEE sensors journal, 2023-09, Vol.23 (17), p.1-1

Ort / Verlag

New York: IEEE

Erscheinungsjahr

2023

Quelle

IEEE Xplore

Beschreibungen/Notizen

• Light loss is one of the main factors affecting the quantum efficiency of photodetectors. Several approaches have been proposed to mitigate light loss and improve the quantum efficiency of silicon-based photodetectors. Here, we demonstrate high-sensitivity photodetectors based on highly antireflective silicon nanopillar arrays (Si-NPAs) as a light trapping layer combined with a thin film of silver nanowires (Ag-NWs) in a mesh configuration. This composite structure overcomes the weak light absorption and severe surface complexation of conventional silicon-based photodetectors. Introduction of Ag-NWs provides multiple transmission paths for electron transfer without affecting the photodetector light absorption, while the formation of Schottky junctions with Si-NPAs promotes photoelectric conversion. Additionally, the effects of different concentrations of Ag-NWs films on the performance of Si-NPAs photodetectors are investigated. The proposed photodetector exhibits the best performance when the concentration of Ag-NWs is 6 mg/mL. At this optimized concentration of Ag-NWs, the external quantum efficiency is 82.4% at 850 nm, which is 5.8 times higher than that of a single Si-NPAs photodetector. Furthermore, the network structure of Ag-NWs promotes the fast response of the device with a short rise/fall time of 80/72 μs, which is about half of the response time of a single Si-NPAs photodetector. The combination of Ag-NWs and silicon nanopillars has the potential to open up new possibilities for the development of highly sensitive photodetectors.