Details

Autor(en) / Beteiligte

• Hallam, Brett J.
• Hamer, Phill G.
• Wenham, Stuart R.
• Abbott, Malcolm D.
• Sugianto, Adeline
• Wenham, Alison M.
• Chan, Catherine E.
• GuangQi Xu
• Kraiem, Jed
• Degoulange, Julien
• Einhaus, Roland

Titel

Advanced Bulk Defect Passivation for Silicon Solar Cells

Ist Teil von

• IEEE journal of photovoltaics, 2014-01, Vol.4 (1), p.88-95

Ort / Verlag

IEEE

Erscheinungsjahr

2014

Quelle

IEEE Electronic Library Online

Beschreibungen/Notizen

• Through an advanced hydrogenation process that involves controlling and manipulating the hydrogen charge state, substantial increases in the bulk minority carrier lifetime are observed for standard commercial grade boron-doped Czochralski grown silicon wafers from 250-500 μs to 1.3-1.4 ms and from 8 to 550 μs on p-type Czochralski wafers grown from upgraded metallurgical grade silicon. However, the passivation is reversible, whereby the passivated defects can be reactivated during subsequent processes. With appropriate processing that involves controlling the charge state of hydrogen, the passivation can be retained on finished devices yielding independently confirmed voltages on cells fabricated using standard commercial grade boron-doped Czochralski grown silicon over 680 mV. Hence, it appears that the charge state of hydrogen plays an important role in determining the reactivity of the atomic hydrogen and, therefore, ability to passivate defects.