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Journal of microelectromechanical systems, 1992-12, Vol.1 (4), p.193-196

1992

Autor(en) / Beteiligte

Titel

A Microstructure For Measurement Of Thermal Conductivity Of Polysilicon Thin Films

Ist Teil von

Ort / Verlag

New York, NY: IEEE

Erscheinungsjahr

1992

Link zum Volltext

Quelle

IEEE Xplore

Beschreibungen/Notizen

The thermal conductivity of polysilicon films pro- duced in CMOS IC technology Is measured In the temperature range 80400 K. A differential method using a pair of oxide inicrobeam test structures with and without polysilicon film Is described. Electronic and lattice thermal conductivity are determined using electrical and galvanomagnetic data obtained for the same film. Above 200 K, we find 29 W/mK total ther mal conductivity with an electronic content of less than 3%.

Sprache: Englisch
Identifikatoren: ISSN: 1057-7157
eISSN: 1941-0158
DOI: 10.1109/JMEMS.1992.752511
Titel-ID: cdi_crossref_primary_10_1109_JMEMS_1992_752511

Format: –
Schlagworte: Applied sciences, CMOS integrated circuits, CMOS process, CMOS technology, Conductive films, Conductivity measurement, Electronics, Etching, Exact sciences and technology, Microstructure, Silicon, Testing, measurement, noise and reliability, Thermal conductivity, Transistors

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