Details

Autor(en) / Beteiligte

• Saks, N.S.
• Ancona, M.G.

Titel

Determination of interface trap capture cross sections using three-level charge pumping

Ist Teil von

• IEEE electron device letters, 1990-08, Vol.11 (8), p.339-341

Ort / Verlag

New York, NY: IEEE

Erscheinungsjahr

1990

Quelle

IEEE Xplore

Beschreibungen/Notizen

• A modified three-voltage-level charge pumping (CP) technique is described for measuring interface trap parameters in MOSFETs. Charge pumping (CP) is a technique for studying traps at the Si-SiO/sub 2/ interface in MOS transistors. In the CP technique, a pulse is applied to the gate of the MOSFET which alternately fills the traps with electrons and holes, thereby causing a recombination current I/sub cp/ to flow in the substrate. With this technique, interface trap capture cross sections for both electrons and holes may be determined as a function of trap energy in a single device. It is demonstrated that a modified three-level charge pumping method may be used to determine not only interface trap densities but also to capture cross sections as a function of trap energy. The trap parameters are obtained for both electrons and holes using a single MOSFET.