Details

Autor(en) / Beteiligte

• Hara, N.
• Suehiro, H.
• Shima, M.
• Kuroda, S.

Titel

0.3-μm gate length p-channel AlGaAs/InGaAs heterostructure field effect transistors with high cut-off frequency

Ist Teil von

• IEEE electron device letters, 1997-02, Vol.18 (2), p.63-65

Ort / Verlag

IEEE

Erscheinungsjahr

1997

Quelle

IEEE Xplore Digital Library

Beschreibungen/Notizen

• P-channel Heterostructure Field Effect Transistors (HFETs) with a 0.3-μm gate were fabricated by Mg ion implantation. The maximum transconductance was 68 mS/mm and there was no serious drain or gate leakage current, regardless of this short gate length. The gate turn on voltage (@I/sub gs/=-1 μA/μm) was -2.1 V and its absolute value was large enough for use in complementary HFETs. S-parameters measurements showed a very high cut-off frequency of over 10 GHz. Results indicated the superiority of less-diffusive Mg ion implantation for forming p/sup +/-layer in p-channel HFETs.