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Asymmetric response of electrical conductivity and V valence state to strain in cation-deficient Sr 1-y VO 3 ultrathin films based on absorption measurements at the V L 2 - and L 3 -edges
Ist Teil von
Journal of synchrotron radiation, 2019-09, Vol.26 (Pt 5), p.1687-1693
Ort / Verlag
United States
Erscheinungsjahr
2019
Quelle
Wiley-Blackwell Journals
Beschreibungen/Notizen
The correlation between electronic properties and epitaxial strain in a cation-deficient system has rarely been investigated. Cation-deficient SrVO
films are taken as a model system to investigate the strain-dependent electrical and electronic properties. Using element- and charge-sensitive soft X-ray absorption, V L-edge absorption measurements have been performed for Sr
VO
films of different thicknesses capped with 4 u.c. (unit cell) SrTiO
layers, showing the coexistence of V
and V
in thick films. A different correlation between V valence state and epitaxial strain is observed for Sr
VO
ultrathin films, i.e. a variation in V valence state is only observed for tensile-strained films. Sr
VO
thin films are metallic and exhibit a thickness-driven metal-insulator transition at different critical thicknesses for tensile and compressive strains. The asymmetric response of electrical conductivity to strain observed in cation-deficient Sr
VO
films will be beneficial for functional oxide electronic devices.