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X-ray Scattering on Stacking Faults in 123 Crystals Considering Local Changes of Distances between Atomic Layers
Ist Teil von
Journal of applied crystallography, 1996-04, Vol.29 (2), p.159-163
Ort / Verlag
5 Abbey Square, Chester, Cheshire CH1 2HU, England: International Union of Crystallography
Erscheinungsjahr
1996
Link zum Volltext
Quelle
Alma/SFX Local Collection
Beschreibungen/Notizen
Spatial distribution of X‐ray diffusion scattering intensity conditioned by additional CuO atomic layers [stacking faults (SF)] in the AB2Cu3O7 −x (123) structure has been studied within a cinematic approach. Natural laws of difffraction‐pattern changes caused by increase of SF density and by local changes of interplanar distances of atomic layers in the vicinity of SFs were obtained. The X‐ray method for determination of the SF density and local changes of interplanar distances is described.