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Comparative study of InGaN and InGaAs based dopingless TFET with different gate engineering techniques
Ist Teil von
Advances in natural sciences. Nanoscience and nanotechnology, 2019-08, Vol.10 (3), p.35009
Ort / Verlag
IOP Publishing
Erscheinungsjahr
2019
Link zum Volltext
Quelle
Alma/SFX Local Collection
Beschreibungen/Notizen
In this paper, we have presented the comparative analysis of InGaN and InGaAs based DL TFETs with different gate engineering methods for lowering the sub-threshold swing and increasing the ION/IOFF ratio. The 2D simulation study is carried out for comparing the results of conventional DL TFET with three gate engineered structures. InGaAs doped hetero-dielectric hetero-gate DL TFET shows best result of about ~2.217 times increase in the ION/IOFF, 40.17% decrease in the average sub-threshold swing as compared to their respective DL TFET structure. Similarly, InGaN doped HD-HG DL TFET shows ~8.514 times increase in the ION/IOFF, 45.83% decrease in the average sub-threshold swing as compared to their respective DL TFET structure. Finally the result shows InGaAs based HD-HG DL TFET as a favourable device for low power and digital applications.