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Autor(en) / Beteiligte
Titel
Enhancement of photoelectrochemical performance in ferroelectric films via the introduction of an Au buffer layer
Ist Teil von
  • Journal of semiconductors, 2021-11, Vol.42 (11), p.112701-69
Ort / Verlag
Chinese Institute of Electronics
Erscheinungsjahr
2021
Quelle
Alma/SFX Local Collection
Beschreibungen/Notizen
  • Abstract The inefficient separation of photogenerated carriers has become a serious problem that limits the photoelectrochemical (PEC) performance of semiconductors. Herein, a sol-gel method was used to prepare BiFeO 3 ferroelectric thin films with FTO and FTO/Au as substrates, respectively. The polarization electric field of the ferroelectric can more effectively separate the carriers generated in the photoelectrode. Meanwhile, the introduction of an Au buffer layer can reduce the resistance in the process of charge transfer, accelerate the carrier migration, and enhance the efficiency of the charge separation. Under light irradiation, Au/BiFeO 3 photoelectrode exhibited an extraordinary improvement in PEC water splitting compared with BiFeO 3 . In addition, the ferroelectric polarization electric field causes band bending, which further accelerates the separation of electrons and holes and improves the PEC performance of the photoelectrode. This work promotes the effective application of ferroelectric films in PEC water splitting.
Sprache
Englisch
Identifikatoren
ISSN: 1674-4926
eISSN: 2058-6140
DOI: 10.1088/1674-4926/42/11/112701
Titel-ID: cdi_crossref_primary_10_1088_1674_4926_42_11_112701

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