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Design of double-layer active frequency-selective surface with PIN diodes for stealth radome
Ist Teil von
Chinese physics B, 2017-08, Vol.26 (9), p.169-174
Erscheinungsjahr
2017
Link zum Volltext
Quelle
Alma/SFX Local Collection
Beschreibungen/Notizen
An experimental double-layer active frequency-selective surface（AFSS） for stealth radome is proposed. The AFSS is a planar structure which is composed of a fixed frequency-selective surface（FSS）, a PIN diodes array, and a DC bias network. The AFSS elements incorporating switchable PIN diodes are discussed. By means of controlling the DC bias network, it is possible to switch the frequency response for reflecting and transmitting. Measured and simulated data validate that when the incidence angle varies from 0°to 30° the AFSS produces more than-11.5 dB isolation across6–18 GHz when forward biased. The insertion loss（IL） is less than 0.5 dB across 10–11 GHz when reverse biased.