Details

Autor(en) / Beteiligte

• Šermukšnis, E
• Liberis, J
• Matulionis, A
• Avrutin, V
• Ferreyra, R
• Özgür, Ü
• Morkoç, H

Titel

Hot-electron real-space transfer and longitudinal transport in dual AlGaN/AlN/{AlGaN/GaN} channels

Ist Teil von

• Semiconductor science and technology, 2015-03, Vol.30 (3), p.35003

Ort / Verlag

IOP Publishing

Erscheinungsjahr

2015

Link zum Volltext

Quelle

Alma/SFX Local Collection

Beschreibungen/Notizen

• Real-space transfer of hot electrons is studied in dual-channel GaN-based heterostructure operated at or near plasmon-optical phonon resonance in order to attain a high electron drift velocity at high current densities. For this study, pulsed electric field is applied in the channel plane of a nominally undoped Al0.3Ga0.7N/AlN/{Al0.15Ga0.85N/GaN} structure with a composite channel of Al0.15Ga0.85N/GaN, where the electrons with a sheet density of 1.4 × 1013 cm−2, estimated from the Hall effect measurements, are confined. The equilibrium electrons are situated predominantly in the Al0.15Ga0.85N layer as confirmed by capacitance-voltage experiment and Schrödinger-Poisson modelling. The main peak of the electron density per unit volume decreases as more electrons occupy the GaN layer at high electric fields. The associated decrease in the plasma frequency induces the plasmon-assisted decay of non-equilibrium optical phonons (hot phonons) confirmed by the decrease in the measured hot-phonon lifetime from 0.95 ps at low electric fields down below 200 fs at fields of 4 kV cm−1 as the plasmon-optical phonon resonance is approached. The onset of real-space transfer is resolved from microwave noise measurements: this source of noise dominates for 8 kV cm−1. In this range of fields, the longitudinal current exceeds the values measured for a mono channel reference Al0.3Ga0.7N/AlN/GaN structure. The results are explained in terms of the ultrafast decay of hot phonons and reduced alloy scattering caused by the real-space transfer in the composite channel.