Details

Autor(en) / Beteiligte

• Haghiri-Gosnet, A-M
• Renard, J-P

Titel

CMR manganites: physics, thin films and devices

Ist Teil von

• Journal of physics. D, Applied physics, 2003-04, Vol.36 (8), p.R127-R150

Ort / Verlag

Bristol: IOP Publishing

Erscheinungsjahr

2003

Quelle

Alma/SFX Local Collection

Beschreibungen/Notizen

• The manganese oxides of general formula RE1-xMxMnO3 (RE = rare earth, M = Ca, Sr, Ba, Pb) have remarkable interrelated structural, magnetic and transport properties induced by the mixed valence (3+-4+) of the Mn ions. In particular, they exhibit very large negative magnetoresistance, called colossal magnetoresistance (CMR), in the vicinity of metal-insulator transition for certain compositions. In this review paper, we summarize the most important features of the physics of the CMR manganites. The growth techniques for manganese oxide thin films, which are the basic material for potential applications, are reviewed and their structure and morphology examined in relation to growth parameters. The effects of epitaxial strains on the physical properties are discussed. Early works on superlattices and devices are presented.