Details

Autor(en) / Beteiligte

• Park, Noh-Hwal
• Shin, Eun Sol
• Ryu, Gi-Seong
• Kwon, Jimin
• Ji, Dongseob
• Park, Hyunjin
• Kim, Yun Ho
• Noh, Yong-Young

Titel

High performance carbon nanotubes thin film transistors by selective ferric chloride doping

Ist Teil von

• Journal of Information Display, 2023, 24(2), , pp.109-118

Ort / Verlag

Seoul: Taylor & Francis

Erscheinungsjahr

2023

Quelle

EZB Electronic Journals Library

Beschreibungen/Notizen

• Single wall carbon nanotubes (SWNT) have been a significant research topic as active layers for thin film transistors (TFTs) due to their high charge carrier mobility beyond that of crystalline silicon. In this study, we report an effective approach to achieve a very high field-effect mobility and on/off ratio for solution processed semiconducting SWNT TFTs, by selective doping through contact with a thin ferric chloride (FeCl 3 ) dopant layer. The semiconducting layer is formed by a double spin coating of the highly purified (>99%) high pressure carbon mono oxide (HiPCO) SWNT sorted by wrapping of poly (3-dodecylthiophene-2,5-diyl) (P3DDT). In order to achieve effective hole injection from the top Au source electrode without increasing the off-state drain current, less purified (98-99%) SWNTs produced by the plasma discharge process sorted by wrapping of poly (9,9-di-n-dodecylfluorene) (PFDD) are formed on the top of HiPCO film. Significantly improved TFT performance is achieved by the insertion of a few nanometers of a FeCl 3 dopant layer at the semiconductor-contact interface. A significant high hole field-effect of 48.35 ± 3.11 cm 2 V −1 s −1 (bare: 6.18 ± 0.87 cm 2 V −1 s −1 ) with a reasonable on/off current ratio of 10 5 , and low off current of ∼80 pA, are obtained by controlling the concentration of FeCl 3 dopant (thickness = 1.5 nm) at the contact. Mobility is improved further at 2.5 nm thickness of the FeCl 3 dopant layer resulting in a hole mobility of 177 ± 13.2 cm 2 V −1 s −1 , an on/off ratio of 7.4 × 10 3 , and off state current of 1.2 × 10 −9  A.