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In this paper, the InAs/GaAs p-i-p quantum dots infrared photodetectors (QDIPs) were successfully demonstrated by Apsys software. It consists of Al
0.3
Ga
0.7
As/GaAs structure to reduce dark current and InAs quantum dots (QDs) embedded in In
0.15
Ga
0.85
As as an active layer. The effect of structure parameters of InAs QDs on the dark current, photocurrent of the device and SNR (signal to noise) is discussed respectively, including different QDs density, the number of QD layer, GaAs thickness between QDs layers and Al
0.3
Ga
0.7
As, and GaAs thickness between two the QD layers.