Details

Autor(en) / Beteiligte

• ANDRIESH, A. M.
• AKIMOVA, E. A.
• BIVOL, V. V.
• KHANCEVSKAYA, E. G.
• IOVU, M. S.
• MALKOV, S. A.
• VERLAN, V. I.

Titel

Metal-semiconductor amorphous thin film-metal structures: properties and applications

Ist Teil von

• International journal of electronics, 1994-09, Vol.77 (3), p.339-342

Ort / Verlag

Taylor & Francis Group

Erscheinungsjahr

1994

Quelle

Taylor & Francis

Beschreibungen/Notizen

• The influence of the electrode material in Me-In 2 S 3 /AS 2 Se 3 -Al, and other amorphous heterostructures, on the current-voltage, capacitance-voltage and photoconductivity characteristics is reported. The simultaneous action of an electrical field and illumination on the barrier structures leads to optical image recording. The sensitivity of the recording structures and the diffraction efficiency of the elementary holograms depends on the strength and polarity of the electrical field, light intensity and density of the recording information.