Details

Autor(en) / Beteiligte

• Koo, June-Mo
• Min, Hyung-Seob
• Lee, Wonhee
• Lee, Jae-Gab
• Kim, Jiyoung
• Ahn, Jin-Ho

Titel

Influences of hydrogen damages in ferroelectric thin film capacitors

Ist Teil von

• Ferroelectrics, 2001-01, Vol.260 (1), p.279-284

Ort / Verlag

Taylor & Francis Group

Erscheinungsjahr

2001

Quelle

Taylor & Francis

Beschreibungen/Notizen

• During the CMOS process, ferroelectric capacitors show degraded ferroelectric properties due to a hydrogen involving process. When hydrogen diffused in PZT thin films through noble metal electrodes (such as Pt, Ir), XRD data indicate a change of lattice parameters and XPS spectra exhibit a change of Pb-O bond in crystalline perovskite phase. Especially, the variation of lattice parameter of PZT (Zr/Ti=20/80) depends on the thickness of top electrodes (Pt).