Details

Autor(en) / Beteiligte

• Chen, X. C.
• Li, L.
• Wang, M. Y.
• Ren, H.
• Liu, X. Q.
• Zeng, G.
• Yang, G. X.

Titel

Carrier-induced formation of electrically active boron-interstitial clusters in irradiated boron-doped silicon

Ist Teil von

• Journal of applied physics, 2024-02, Vol.135 (5)

Ort / Verlag

Melville: American Institute of Physics

Erscheinungsjahr

2024

Quelle

Alma/SFX Local Collection

Beschreibungen/Notizen

• Excess minority carriers create boron-related recombination centers that degrade the efficiency of the non-particle-irradiated silicon solar cells. However, the carrier-induced reactions among the radiation-induced defects are poorly understood for devices exposed to particle radiation. This study investigates the structure, electronic properties, formation and annihilation mechanisms, and diffusion dynamics of the carrier-induced defects in particle-irradiated boron-doped silicon using density-functional modeling and junction spectroscopy. By revisiting the ground-state structures of the boron-di-interstitial clusters (B I 2), we find that the calculated acceptor and donor levels of such defects agree well quantitatively with the carrier-induced deep-level transient spectroscopy (DLTS) hole emission signatures at 0.43 and 0.53 eV above the valence band edge ( E v), respectively. We also find that the formation of B I 2 is thermally activated by an energy of 0.50 eV, which we explain theoretically by the reduction of the migration barrier of mono-interstitials to 0.53 eV in the presence of excess minority carriers. Moreover, we discover that the B I 2 are potentially mobile with a migration barrier of 1.18 eV, contrary to the present understanding.