Details

Autor(en) / Beteiligte

• Zhou, Xiao-Li
• Lv, Yang-Yang
• Zhang, Hang-Fei
• Zhang, Yong
• Zhang, Jinglei
• Zhou, Jian
• Yao, Shu-Hua
• Chen, Y. B.
• Chen, Yan-Feng

Titel

Realization of adjustable electron concentration and its effect on electrical- and Seebeck-property of n-type SnSe crystals

Ist Teil von

• Applied physics letters, 2022-01, Vol.120 (2)

Ort / Verlag

Melville: American Institute of Physics

Erscheinungsjahr

2022

Quelle

AIP Journals (American Institute of Physics)

Beschreibungen/Notizen

• Manipulation of carrier types in SnSe crystals is quite advantageous to fabricate SnSe-based homojunction devices such as thermoelectric modules. However, tuning the n-type charge carrier at an optimal level of SnSe is quite challenging because of its natural p-type without intentional doping. Here, we report the realization of the n-type SnSe through halogens or Ce doping. Importantly, heavily electron doped SnSe single crystals (∼1019 cm−3) can be obtained by Ce-doping through the Bridgeman method. The electrical conductivity of as-grown SnSe crystals evolves from thermally activated behavior to the metallic one when the electron concentrations are increased from 1016 to 1019 cm−3. Remarkably, the power-factor and electronic quality factor of heavily electron Ce-doped SnSe crystals can reach 1.59 and 0.44 μW cm−1 K−2 at 300 K, respectively, which is one of the best thermoelectric n-type SnSe. This work suggests that Ce-doping through the Bridgeman method is an ideal route for further improving the thermoelectric property of n-type SnSe crystals.