Applied physics letters, 2020-07, Vol.117 (4)
2020
Details
- Autor(en) / Beteiligte
- Titel
- Atomic layer deposition of SiO2–GeO2 multilayers
- Ist Teil von
- Applied physics letters, 2020-07, Vol.117 (4)
- Ort / Verlag
- Melville: American Institute of Physics
- Erscheinungsjahr
- 2020
- Link zum Volltext
- Quelle
- AIP Journals Complete
- Beschreibungen/Notizen
- Despite its potential for CMOS applications, atomic layer deposition (ALD) of GeO2 thin films, by itself or in combination with SiO2, has not been widely investigated yet. Here, we report the ALD growth of SiO2/GeO2 multilayers on si1icon substrates using a so far unexplored Ge precursor. The characterization of multilayers with various periodicities reveals layer-by-layer growth with electron density contrast and the absence of chemical intermixing, down to a periodicity of two atomic layers.
- Sprache
- Englisch
- Identifikatoren
- ISSN: 0003-6951eISSN: 1077-3118DOI: 10.1063/5.0009844Titel-ID: cdi_crossref_primary_10_1063_5_0009844
- Format
- –
- Schlagworte
- Atomic layer epitaxy, CMOS, Electron density, Germanium oxides, Multilayers, Periodic variations, Silicon dioxide, Substrates, Thin films