Details

Autor(en) / Beteiligte

• Tu, Y.
• Shimizu, Y.
• Kunimune, Y.
• Shimada, Y.
• Katayama, T.
• Ide, T.
• Inoue, M.
• Yano, F.
• Inoue, K.
• Nagai, Y.

Titel

Effect of carbon on boron diffusion and clustering in silicon: Temperature dependence study

Ist Teil von

• Journal of applied physics, 2018-10, Vol.124 (15)

Ort / Verlag

Melville: American Institute of Physics

Erscheinungsjahr

2018

Quelle

AIP Journals (American Institute of Physics)

Beschreibungen/Notizen

• Atom probe tomography and secondary ion mass spectrometry were used to investigate the effects of carbon (C) co-implantation and subsequent annealing at 600 to 1200 °C on the behavior of implanted boron (B) atoms in silicon. When B alone was implanted, annealing at 600 to 800 °C caused it to form clusters in the peak region (1020 cm−3) of the concentration profile, and diffusion only occurred in the low-concentration tail region (<1018 cm−3), which is thought to be the well-known transient enhanced diffusion. However, when co-implantation with C was performed, this diffusion was almost completely suppressed in the same annealing temperature range. In the absence of C implantation, annealing at 1000 °C caused B clusters to begin to dissolve and B to diffuse out of the peak concentration region. However, this diffusion was also suppressed by C implantation because C atoms trapped B atoms in the kink region found at the B concentration level of 2 × 1019 cm−3. At 1200 °C, B clusters were totally dissolved and a strong B diffusion occurred. In contrast to lower annealing temperatures, this diffusion was actually enhanced by C implantation. It is believed that Si interstitials play an important role in the interaction between B and C. This kind of comprehensive investigation yields important information for optimizing ion implantation and annealing processes.