Details

Autor(en) / Beteiligte

• Deng, Gaoqiang
• Zhang, Yuantao
• Yu, Ye
• Yan, Long
• Li, Pengchong
• Han, Xu
• Chen, Liang
• Zhao, Degang
• Du, Guotong

Titel

Significantly improved surface morphology of N-polar GaN film grown on SiC substrate by the optimization of V/III ratio

Ist Teil von

• Applied physics letters, 2018-04, Vol.112 (15)

Erscheinungsjahr

2018

Link zum Volltext

Quelle

American Institute of Physics (AIP) Journals

Beschreibungen/Notizen

• In this paper, N-polar GaN films with different V/III ratios were grown on vicinal C-face SiC substrates by metalorganic chemical vapor deposition. During the growth of N-polar GaN film, the V/III ratio was controlled by adjusting the molar flow rate of ammonia while keeping the trimethylgallium flow rate unchanged. The influence of the V/III ratio on the surface morphology of N-polar GaN film has been studied. We find that the surface root mean square roughness of N-polar GaN film over an area of 20 × 20 μm2 can be reduced from 8.13 to 2.78 nm by optimization of the V/III ratio. Then, using the same growth conditions, N-polar InGaN/GaN multiple quantum wells (MQWs) light-emitting diodes (LEDs) were grown on the rough and the smooth N-polar GaN templates, respectively. Compared with the LED grown on the rough N-polar GaN template, dramatically improved interface sharpness and luminescence uniformity of the InGaN/GaN MQWs are achieved for the LED grown on the smooth N-polar GaN template.