Details

Autor(en) / Beteiligte

• Pokhabov, D. A.
• Pogosov, A. G.
• Zhdanov, E. Yu
• Shevyrin, A. A.
• Bakarov, A. K.
• Shklyaev, A. A.

Titel

Lateral-electric-field-induced spin polarization in a suspended GaAs quantum point contact

Ist Teil von

• Applied physics letters, 2018-02, Vol.112 (8)

Erscheinungsjahr

2018

Quelle

AIP Journals Complete

Beschreibungen/Notizen

• The conductance of a GaAs-based suspended quantum point contact (QPC) equipped with lateral side gates has been experimentally studied in the absence of the external magnetic field. The half-integer conductance plateau ( 0.5×2e2/h) has been observed when an asymmetric voltage between the side gates is applied. The appearance of this plateau has been attributed to the spin degeneracy lifting caused by the spin-orbit coupling associated with the lateral electric field in the asymmetrically biased QPC. We have experimentally demonstrated that, despite the relatively small g-factor in GaAs, the observation of the spin polarization in the GaAs-based QPC became possible after the suspension due to the enhancement of the electron-electron interaction and the effect of the electric field guiding. These features are caused by a partial confinement of the electric field lines within a suspended semiconductor layer with a high dielectric constant.