Details

Autor(en) / Beteiligte

• Cheng, Chuan-Hui
• Zhang, Bi-Long
• Sun, Chao
• Li, Ruo-Xuan
• Wang, Yuan
• Tian, Wen-Ming
• Zhao, Chun-Yi
• Jin, Sheng-Ye
• Liu, Wei-Feng
• Luo, Ying-Min
• Du, Guo-Tong
• Cong, Shu-Lin

Titel

Significant performance enhancement of inverted organic light-emitting diodes by using ZnIx as a hole-blocking layer

Ist Teil von

• Journal of applied physics, 2017-06, Vol.121 (23)

Ort / Verlag

Melville: American Institute of Physics

Erscheinungsjahr

2017

Link zum Volltext

Quelle

AIP Journals Complete

Beschreibungen/Notizen

• A highly efficient inverted organic light emitting diode using 1.0 nm-thick ZnIx as a hole-blocking layer is developed. We fabricate devices with the configuration ITO/ZnIx (1.0 nm)/Alq3 (50 nm)/NPB (50 nm)/MoO3 (6.0 nm)/Al (100 nm). The deposition of a ZnIx layer increases the maximum luminance by two orders of magnitude from 13.4 to 3566.1 cd/m2. In addition, the maximum current efficiency and power efficiency are increased by three orders of magnitude, and the turn-on voltage to reach 1 cd/m2 decreases from 13 to 8 V. The results suggest that the electron injection efficiency is not improved by introducing a ZnIx layer. Instead, the improved device performance originates from the strong hole-blocking ability of ZnIx. This work indicates that layered materials may lead to novel applications in optoelectronic devices.