Details

Autor(en) / Beteiligte

• Xia, Xiaochuan
• Chen, Yuanpeng
• Feng, Qiuju
• Liang, Hongwei
• Tao, Pengcheng
• Xu, Mengxiang
• Du, Guotong

Titel

Hexagonal phase-pure wide band gap ε-Ga2O3 films grown on 6H-SiC substrates by metal organic chemical vapor deposition

Ist Teil von

• Applied physics letters, 2016-05, Vol.108 (20)

Ort / Verlag

Melville: American Institute of Physics

Erscheinungsjahr

2016

Quelle

American Institute of Physics (AIP) Journals

Beschreibungen/Notizen

• In this paper, hexagonal structure phase-pure wide-band gap ε-Ga2O3 films were grown by metal organic chemical vapor deposition on 6H-SiC substrates. The ε-Ga2O3 films with good crystal quality were verified by high-resolution X-ray diffraction. The out-of-plane epitaxial relationship between ε-Ga2O3 films and 6H-SiC substrates is confirmed to be ε-Ga2O3 (0001)//6H-SiC (0001), and the in-plane epitaxial relationship is also confirmed to be ε-Ga2O3 ⟨ 11 2 ¯ 0 ⟩//6H-SiC ⟨ 11 2 ¯ 0 ⟩. The SEM and AFM images show that the ε-Ga2O3 films are uniform and flat. The ε-Ga2O3 films are thermally stable up to approximately 800 °C and begin to transform into β-phase Ga2O3 at 850 °C. Then, they are completely converted to β-Ga2O3 films under 900 °C. The high-quality ε-Ga2O3 films with hexagonal structure have potential application in the optoelectronic field.