Details

Autor(en) / Beteiligte

• Oh, Jeong-Do
• Seo, Hoon-Seok
• Shin, Eun-Sol
• Kim, Dae-Kyu
• Ha, Young-Geun
• Choi, Jong-Ho

Titel

ZrO2 dielectric-based low-voltage organic thin-film inverters

Ist Teil von

• Applied physics letters, 2013-08, Vol.103 (6)

Erscheinungsjahr

2013

Quelle

AIP Journals Complete

Beschreibungen/Notizen

• In this paper, the authors first report ZrO2-dielectric based low-voltage organic thin-film complementary metal-oxide semiconductor inverters. Two active layers of p-type pentacene and n-type N,N′-dioctyl-3,4,9,10-perylenedicarboximide were successively deposited on the thermally stable, transparent ZrO2 using the neutral cluster beam deposition method. Based on the good balance between p- and n-type transistors, the complementary inverters exhibited ideal characteristics including sharp inversions, complete switching, high gains, and large voltage swings at low operating voltage levels.