Details

Autor(en) / Beteiligte

• Zhang, J.
• Trifunovic, M.
• van der Zwan, M.
• Takagishi, H.
• Kawajiri, R.
• Shimoda, T.
• Beenakker, C. I. M.
• Ishihara, R.

Titel

Single-grain Si thin-film transistors on flexible polyimide substrate fabricated from doctor-blade coated liquid-Si

Ist Teil von

• Applied physics letters, 2013-06, Vol.102 (24)

Erscheinungsjahr

2013

Quelle

Alma/SFX Local Collection

Beschreibungen/Notizen

• Solution process of silicon will provide high-speed transistor fabrication with low-cost by, for example, roll-to-roll process. In this paper, a low-temperature process (350 °C) is reported for fabrication of high-quality Si devices on a polyimide substrate from doctor-blade coated liquid-Si. With this method, different semiconductor devices have been fabricated, reporting a carrier mobility of 460 cm2/V s and 121 cm2/V s for electrons and holes, respectively. The devices were peeled off and transferred onto a polyethylene naphthalate foil to achieve flexible devices. CMOS inverters were also fabricated and show full output swing.