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Analysis of plasmonic properties of heavily doped semiconductors using full band structure calculations
Ist Teil von
Journal of applied physics, 2013-03, Vol.113 (11)
Erscheinungsjahr
2013
Quelle
American Institute of Physics
Beschreibungen/Notizen
Surface plasmon polaritons (SPPs) and localized surface plasmon (LSP) resonances are not limited to noble metals. Any material with a substantial amount of free carriers will support surface plasma oscillations which, when coupled to an electromagnetic field, will result in surface plasmon polaritons and localized surface plasmon resonances in confined systems. Utilizing a full band structure approach, we analyze the plasmonic properties of several heavily doped semiconductors. We present rigorous quantum mechanical calculations of the plasma frequency, and study in detail its dependence on impurity doping concentration. Results are presented for silicon, germanium, gallium arsenide, zinc oxide, and gallium nitride. For silicon and zinc oxide, the surface plasmon resonance frequency is calculated for a large range of doping concentrations and we study the dispersion of surface plasmon polaritons on thin films. The investigated properties of heavily doped semiconductors hold promises for several interesting applications within plasmonics.
Sprache
Englisch
Identifikatoren
ISSN: 0021-8979
eISSN: 1089-7550
DOI: 10.1063/1.4795339
Titel-ID: cdi_crossref_primary_10_1063_1_4795339
Format
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