Details

Autor(en) / Beteiligte

• Thapa, Resham
• Alur, Siddharth
• Kim, Kyusang
• Tong, Fei
• Sharma, Yogesh
• Kim, Moonil
• Ahyi, Claude
• Dai, Jing
• Wook Hong, Jong
• Bozack, Michael
• Williams, John
• Son, Ahjeong
• Dabiran, Amir
• Park, Minseo

Titel

Biofunctionalized AlGaN/GaN high electron mobility transistor for DNA hybridization detection

Ist Teil von

• Applied physics letters, 2012-06, Vol.100 (23), p.232109-232109-4

Ort / Verlag

American Institute of Physics

Erscheinungsjahr

2012

Quelle

AIP Journals Complete

Beschreibungen/Notizen

• Label-free electrical detection of deoxyribonucleic acid (DNA) hybridization was demonstrated using an AlGaN/GaN high electron mobility transistor (HEMT) based transducer with a biofunctionalized gate. The HEMT DNA sensor employed the immobilization of amine-modified single strand DNA on the self-assembled monolayers of 11-mercaptoundecanoic acid. The sensor exhibited a substantial current drop upon introduction of complimentary DNA to the gate well, which is a clear indication of the hybridization. The application of 3 base-pair mismatched target DNA showed little change in output current characteristics of the transistor. Therefore, it can be concluded that our DNA sensor is highly specific to DNA sequences.