Details

Autor(en) / Beteiligte

• Collazo, Ramón
• Xie, Jinqiao
• Gaddy, Benjamin E.
• Bryan, Zachary
• Kirste, Ronny
• Hoffmann, Marc
• Dalmau, Rafael
• Moody, Baxter
• Kumagai, Yoshinao
• Nagashima, Toru
• Kubota, Yuki
• Kinoshita, Toru
• Koukitu, Akinori
• Irving, Douglas L.
• Sitar, Zlatko

Titel

On the origin of the 265 nm absorption band in AlN bulk crystals

Ist Teil von

• Applied physics letters, 2012-05, Vol.100 (19)

Erscheinungsjahr

2012

Quelle

Alma/SFX Local Collection

Beschreibungen/Notizen

• Single crystal AlN provides a native substrate for Al-rich AlGaN that is needed for the development of efficient deep ultraviolet light emitting and laser diodes. An absorption band centered around 4.7 eV (∼265 nm) with an absorption coefficient above 1000 cm−1 is observed in these substrates. Based on density functional theory calculations, substitutional carbon on the nitrogen site introduces absorption at this energy. A series of single crystalline wafers were used to demonstrate that this absorption band linearly increased with carbon, strongly supporting the model that CN- is the predominant state for carbon in AlN.